Fine Feature Gold Fill
Using the Solstice® GoldPro™ Chamber
For RF and photonics devices, gold plating plays a vital role in device performance. Gold plating continues to be the standard for many photonics applications, including indium phosphide (InP)-based laser chips used in optical communications and interconnects for AI datacenters, as well as gallium arsenide (GaAs)-based RF semiconductor devices used in mobile communications, aerospace and defense, and automotive systems. The Solstice® platform excels in gold plating because of its advanced fountain-plater design.
Our proprietary Solstice® GoldPro™ chamber design generates randomized fluid vectors at the diffusion layer of the wafer and uses the physics of a rotating disc electrode to provide you optimal conditions. This supports both high plating rates and high step coverage and ensures the diffusion layer is as thin as is practical. It also helps ensure that fluid motion remains directionless. The result is higher throughput without sacrificing coverage.
Applications
- Bond pad fill
- VSCEL contact
- Advanced RF applications
- microLED high-resolution displays
- And more…
Features
- Randomized fluid vectoring
- Adjustable diffuser
- Dissolved oxygen control
- Dry-contact, low maintenance plating rotor
- Customized seal reach
- Continuously filtered chemistry loop
- Optional carbon filtration
- Levitronix® pump with LeviFlow™
Benefits
- High plating rate and high uniformity
- Extremely uniform field profile
- Maximized bath life
- Seal reach aligns to existing integration
- Continuously cleaner chemistry
- Precise, consistent flow rate control
| Technical Data | |
| Wafer Materials | Silicon GaAs GaN on Si, GaN on Sapphire Sapphire Transparent substrates and more |
| Flow Rate | 20 – 60 lpm Dependant on wafer size |
| Plating Rate | Up to 0.5/minute (depend on chemistry and feature size) |
| Within-Wafer Uniformity | <2% |
| Within Feature Uniformity | <2% |
| Wafer-to-Wafer Uniformity | <2% |
| Step Coverage | 70-93% (depend on aspect ratio) |
| Roughness | <2kA |
