KOH Wet Etch

With Solstice^® Systems

Typical KOH Wet Etch Performance

Within-wafer uniformity: ≤3%
Roughness: ≤10nm RMS
Rate: 0.3µ/min

View Solstice Systems

KOH wet etch process micro image

Cleanly etched silicon structure following KOH wet etch on Solstice.

Typical KOH Wet Etch Performance

Within-wafer uniformity: ≤3%
Roughness: ≤10nm RMS
Rate: 0.3µ/min

View Solstice Systems

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